EMPRL MicroFab Research Projects
Silicon materials and devices
III-V materials and devices
Other materials and devices
Amorphous silicon thin film transistors for active matrix liquid crystal flat panel displays T. N. Jackson
Amorphous silicon solar cells on lightweight, flexible polyimide substrates T. N. Jackson
Silicon/silicon-germanium two-dimensional electron gas heterostructures T. N. Jackson
Hydrogenated amorphous silicon-germanium for black matrix integration in active matrix liquid crystal displays T. N. Jackson
Silicon/silicon carbide wafer bonding T. N. Jackson
III-V materials
and devices
Gallium arsenide based radiation-hard
photovoltaics T. N. Jackson
Gallium arsenide based room-temperature gamma-ray detectors T. N. Jackson
Gallium nitride based optoelectronic devices T. N. Jackson
III-V materials for heterojunction bipolar transistors (HBTs) D. L. Miller, T. S. Mayer
2.6 µm-cutoff InGaAs detectors D. L. Miller, T. S. Mayer
Improved HBT and laser reliability D. L. Miller, T. S. Mayer
Thallium-containing III-V IR materials D. I. Loubyshev
Perturbed angular correlation spectroscopy of III-V surfaces Gary L. Catchen, D. L. Miller
Interfacial bonding research for compliant substrates D. L. Miller, T. S. Mayer
Contacts to GaN S. E. Mohney
Oxidation of Compound Semiconductors S. E. Mohney
Organic thin film transistors for active matrix liquid crystal flat panel displays. T. N. Jackson
Silicon carbide field effect transistors. T. N. Jackson
Electronic circuits based on organic thin films. T. N. Jackson
Chemically assisted ion-beam etching and reactive ion-beam sputtering. T. N. Jackson
Organic thin film based optoelectronic devices. T. N. Jackson
Thin film transistors based on epitaxial oxides. T. N. Jackson
Contacts to SiC S. E. Mohney
Solid State Hydrocarbon Sensors S. E. Mohney
Back to top of page
Back to MicroFab homepage