Designation:

Senior/Grad-level technical elective for Electrical Engineering students

Catalog Data:

The fundamentals of device technology, including oxidation, diffusion, photoresist, metallization, epitaxy and material preparation. Prerequisite: EE 310, ESci 314.

Prerequisites by topic:

1. Knowledge of the basic physics of semiconductor materials.
2. Knowledge of the physical principles of operation of key semiconductor devices both field-effect (MOS in particular) and bipolar.
3. Understanding of the principles of digital and analog circuits.
4. Proficiency in the use of computational tools for the purpose of process modeling and simulation.
5. Proficiency in the use of basic equipment used in electrical characterization of semiconductor devices.

Educational objective of this course is to teach students through lectures, laboratory and homework assignments fundamentals of semiconductor integrated circuit technology with emphasis on ULSI silicon IC fabrication. Specific educational tasks that this course aims to accomplish include:

1. Become familiar with a process of developing a monolithic integrated circuit and with types of monolithic integrated circuits.
2. Learn what type of operations and applied in what sequence are used to manufacture a monolithic integrated circuit.
3. Learn in detail basics of all operations used to manufacture a silicon-based monolithic integrate circuit.
4. Gain experience in the modeling and simulation of semiconductor manufacturing processes.
5. Gain a hands-on experience in carrying out key operations needed to fabricate monolithic silicon-based integrated circuit.
6. Become proficient in the measurements of key electrical parameters and characteristics of MOS capacitors and simple MOS integrated circuits.

1. Overview of processes in EE 418 laboratory.
2. Introduction: Semiconductor integrated circuits, overview of microelectronic technology, basic processing steps in IC manufacturing.
3. Fabrication of silicon wafers
4. Wafer cleaning surface preparation technology.
5. Thin Layers of single crystal silicon; epitaxial deposition, SOI substrates.
6. Dielectric materials in silicon device technology; advanced MOS gate technology; high-k dielectrics.
7. Pattern definition: lithography and etching.
8. Selective doping techniques: diffusion and ion implantation.
9. Contacts and interconnects; copper and low-k dielectrics.
10. Assembly and packaging.

50-minute lectures and one 3-hour laboratory per week.

Computer Usage:

1. Modeling and simulation of selected processes in an integrated circuit manufacturing.
2. Data collection and processing in laboratory projects as well preparation of formal technical report.

During laboratory sessions in this course students fabricate an MOSFET Al-gate contact based chips containing both discreet MOS devices as well as simple integrated circuits. Laboratory experience is used to strengthen through hands-on experience the knowledge of concepts introduced and discussed in class, followed by measurements of electrical characteristics of fabricated devices. The following are the four parts of the laboratory project:

1. First, at least two laboratory sessions are devoted to the introduction of microelectronics laboratory procedures as well safety requirements.
2. Starting with bare silicon wafers, students manufacture, typically in the course of about seven laboratory sessions, a complete MOS microchip using set of four masks prepared ahead of time.
3. Wafers with processed devices and circuits are subjected to electrical testing during typically 2-3 laboratory sessions.
4. Students individually prepare formal report summarizing experimental procedures and results obtained.

This course stresses manufacturing aspect in the area of electronic and photonic materials and devices. The course is also taken by other than EE majors including materials science and engineering, physics, and engineering science and mechanics. It is a prerequisite to the follow up advanced semiconductor manufacturing graduate level course (EE 518).

Relationship to program outcomes:

1. Graduates will have a theoretical and practical background in both physics and chemistry. [Ref: Outcome O.1.2.]
2. Graduates will understand electronic devices. [Ref: Outcome O.2.2]
3. Graduates will have in-depth technical knowledge in one or more areas of specialization. [Ref: Outcome O.3.1]
4. Graduates will develop an appreciation of higher-level research [Ref: Outcome O.4.2.]
5. Graduates will have teamwork skills. [Ref: Outcome O.5.1.]
6. Graduates will possess oral and written communication skills. [Ref: Outcome O.5.2.]