"Densities of States Below Midgap Determined from Space Charge Limited Currents of Holes in Intrinsic Hydrogenated Amorphous Silicon", R. Dawson, C.R.Wronski and M.Bennett, Appl. Phys. Lett. 58, 272 (1991).
"Effect of Midgap States in Intrinsic Hydrogenated Amorphous Silicon on Sub-Band-Gap Photoconductivity", S. Lee, M. Gunes, N. Maley, M. Bennett and C.R.Wronski, Appl. Phys. Lett. 59, 1578 (1991).
"Real Time Spectroscopic Ellipsometry Determination of the Evolution of Amorphous Semiconductor Optical Functions, Bandgap, and Microstructure", Y.M.Li, I. An, H.V.Nguyen, C.R.Wronski and R.W. Collins, J.Non-Cryst. Sol., 137 & 138, (1991).
"Charge-Defect Equilibrium Description of Metastable Defect Concentrations", C.M. Fortmann, R.W. Dawson and C.R.Wronski, J. Non-Cryst.Sol., 137 & 138, (1991).
"In-Situ Determination of Dielectric Function and Optical Gap of Ultra-Thin Amorphous Silicon by Real-Time Ellipsometry", I. An, Y.M. Li, C.R.Wronski, H.V.Nguyen and R.W.Collins, Appl. Phys.Lett. 59, 2543 (1991).
"Effect of Surface Recombination on the Spectral Dependence of Photocurrent in Intrinsic Hydrogenated Amorphous Silicon Films", Y.M.Li, R.M.Dawson, R.W. Collins and C.R.Wronski, Appl. Phys. Lett. 59, 2549 (1991).
"Electron Transport Mechanisms in Metal Schottky Barrier Contacts to Hydrogenated Amorphous Silicon", D.E.Heller, R.M.Dawson, C.T. Malone, S.Nag and C.R. Wronski, J.Appl. Phys. 72, 2377 (1992).
"Review of Direct Measurements of Mobility Gaps in a-Si:H Using Internal Photoemission", C.R.Wronski, J.Non-Crystal Solids, 141, 16 (1992).
"Thin Film Coalescence in Hydrogenated Amorphous Silicon Probed by Spectroscopic Ellipsometry with Millisecond-Scale Resolution", Y.M.Li, An, H.V. Nguyen, C.R.Wronski, and R.W. Collins, Phys. Rev.Lett., 68, 16 (1992).
"Differences Between Light Induced and Native Midgap States in Intrinsic Hydrogenated Amorphous Silicon Obtained from Detailed Modeling of Photoconductivities and Sub-Bandgap Absorption", M.Gunes and C.R.Wronski, Appl. Phys. Lett., 61, 678 (1992).
"Effect of the Metal-Semiconductor Interface on Carrier Collection in a-Si:H Schottky Barrier Solar Cell Structures", S.Nag, J.L.Nique, C. Malon, J. Arch, D.Heller, S.Fonash and C.R.Wronski, Solar Energy Mats. and Solar Cells, 26, 285 (1992).
"Effects of Microstructure on Transport Properties of Undoped Hydrogenated Amorphous Silicon Films", R.M.Dawson, C.M.Fortmann, M.Gunes, Y.M.Li, S.S.Nag, R.W. Collins and C.R.Wronski, Appl. Phys. Lett., 63, 955 (1993).
"Amorphous Silicon Dispersive Transport Considerations for Analysis of Films and Solar Cells", C.F. Fortmann, R.M. Dawson, M. Gunes and C.R. Wronski, Journal Non-Cryst. Solids, 164-166, 509, (1993).
"Nucleation and Growth of Hydrogenated Amorphous Silicon-Carbon Alloys: Effect of Hydrogen Dilution of Plasma-Enhanced Chemical vapor Deposition", Y.Lu, I. An, M. Gunes, M.Wakagi, C.R.Wronski and R.W. Collins, Appl. Phys. Lett., 63, 2228-2230 (1993).
"Chemical Equilibration of Plasma-Deposited Amorphous Silicon with Thermally Generated Atomic Hydrogen", I. An, Y.M. Li, C.R. Wronski and R.W. Collins, Phys. Rev. B, 48, 4464- 447 (1993).
"Real Time Spectroscopic Ellipsometry for Characterization of Nucleation, Growth and Optical Functions of Thin Films", Thin Solid Films, 233, 244 (1993).
"A Real Time Spectoellipsometry Study of ZnO/a-Si1-xCx:H Interface Formation", I. An, Y. Lu, C.R.Wronski and R.W. Collins, Appl. Phys. Lett., 64, 3317 (1994).
"Preparation of Ultrathin Microcrystalline Silicon Layers by Atomic Hydrogen Etching of Amorphous Silicon and Endpoint Detection by Real Time Spectroellipsometry", H.V. Nguyen, I. An, R.W. Collins, Y. Lu, M. Wakagi and C.R.Wronski, Appl. Phys. Lett., 65, 3335 (1994).
"Charged Defect States in Intrinsic Hydrogenated Amorphous Silicon Films", M.Gunes, C.R.Wronski and T.J. McMahon, J. Appl. Phys., 76, 2260 (1994).
"Internal Photoemission on a-Si:H Schottky Barrier Revisited" I.S.Chen and C.R. Wronski, J. Non. Cryst. Solids, 190, 58 (1995).
"A Real Time Spectroellipsometry Study of Hydrogenated Amorphous Silicon p-i-n Solar Cells: Characterization of Microstructural Evolution and Optical Gaps", J. Koh, Y. Lu, S. Kim, J.S.Burnham, C.R.Wronski, and R.W. Collins, Applied Physics Letters 67, 669-2671 (1995).
"Amorphous Silicon Technology: Coming of Age", C.R. Wronski, Solar Energy Materials and Solar Cells, 41-42, 427 (1996).
"Characterization of Semiconductor Heterojunctions Using Internal Photoemission", I.S.Chen, T.N.Jackson and C.R.Wronski, J.Appl. Phys. 15 April, 1996.
"A Novel Approach to the Analysis of Sub-bandgap Absorption in a-Si:H Based Materials", I.S.Chen, L.Jiao, R.W.Collins and C.R.Wronski, J.Non.Cryst. Solids, 198-200, 391 (1996).
"Distribution of Charged Defects in a-Si:H n-i Schottky Barrier Solar Cells", H.Liu, L.Jiao, S.Semoushkina and C.R.Wronski, J. Non.Cryst. Solids, 198-200, 1168 (1996).
"Correlation of Real Time Spectroellipsometry and Atomic Force Microscopy Measurements of Surface Roughness on Amorphous Semiconductor Thin Films", J. Koh, Y. Lu, C. R. Wronski, Y. Kuang, R.W. Collins, T.T. Tsong and Y.E. Strausser, Appl. Phys. Lett., 69, 1297 (1996).
"Initial, Rapid Light Induced Changes in Hydrogenated Amorphous Silicon Materials and Solar Cell Structures: the Effect of Charged Defects", L. Jiao, H. Liu, S. Semoushikiana, Y. Lee and C.R. Wronski, Appl. Phys. Lett., 69, 3713 (1996).
"Insights into Deposition Processes for Amorphous Semiconductor Materials and Devices from Real Time Spectroscopic Ellipsometry", R.W.Collins, J.S.Burnham, S.Kim, J.Koh, Y.Lu and C.R.Wronski, J.Non.Cryst. Solids, 198-200, 981 (1996).
"Research on the Stability of a-Si:H Based Solar Cells by SMART", C.R. Wronski and N. Maley, AIP Conference Proceedings 234, Amorphous Silicon Materials and Solar Cells, Denver, CO 1991, p.11.
"An Experiment to Distinguish Bimolecular and Single Carrier Driven Models of Metastable Defect Generation Evidence for Single Carrier Mechanism", S. J. Fonash, S.S. Nag, J. L. Nicque, J.K. Arch and C.R. Wronski, AIP Conference Proceedings 234, Amorphous Silicon Materials and Solar Cells, Denver, CO 1991, p.114.
"Effect of Light Induced Defects on the Quantum Efficiency of Amorphous Silicon Schottky Barrier Solar Cell Structures", C.T. Malone, J.L. Nicque, S.J. Fonash, M. Bennett and C.R. Wronski, Conference Record of the 22nd IEEE Photovoltaics Specialists Conference, Las Vegas (IEEE, N.Y.), 1991, p.1219.
"Nature and Densities of Gap States in a-Si:H and a-SiC:H Obtained from the Quantitative Analysis of Photoconductivity", M.Gunes, R.M. Dawson, S.Lee, C.R. Wronski, N. Maley and Y. M. Li, Conference Record of the 22nd IEEE Photovoltaics Specialists Conference, Las Vegas (IEEE, N.Y.), 1991, p.1242.
"Charge-Defect Equilibrium Description of the Staebler-Wronski Defect Concentration and Formation Energy", C.M. Fortmann, R.M. Dawson and C.R. Wronski, Materials Research Society Symposium Proceedings: Amorphous Silicon Technology - 1991, Vol. 219, (1991), p.63.
"Performance and Degradation of the (p)a-SiC:H Intrinsic a-Si:H(n)a-Si:H Solar Cells: Computer Modeling Study", F.A. Rubinelli, J.Y. Hu, S. Fonash and C.R. Wronski, Conference Record of the 22nd IEEE Photovoltaics Specialists Conference, Las Vegas (IEEE, N.Y.), 1991, p.1405.
"Experimental and Theoretical Studies on the Nature of Defects in a-Si:H Intrinsic Films and Their Schottky Barrier Solar Cell Structures", M. Gunes, C.T. Malone, J.L. Nique, S.Fonash and C.R.Wronski, Proc. of the 6th Int'l. Photovoltaic Sci. and Eng. Conf., ed. by B.K. Das and S.N. Singh, New Delhi, India (1992), p.61.
"Electron Transport Mechanism in Nickel Schottky Barrier Contacts to Hydrogenated Amorphous Silicon", D.E. Heller, M.Gunes, F.Rubinelli, R.M.Dawson, S.Nag, S.J. Fonash and C.R. Wronski, Mat. Res. Soc. Proc., Vol. 258, (1992), p. 1031.
"Optical Properties and Structure of Microcrystalline Silicon", H.V. Nguyen, I. An, Y. M.Li and C.R. Wronski and R.W. Collins, Mat. Res. Soc. Proc., Vol. 258, (1992), p. 235.
"Modification of a-Si:H by Thermally Generated Atomic Hydrogen: A Real Time Spectroscopic Ellipsometry Study of Si Bond Breaking", I. An, Y.M.Li, C.R. Wronski and R.W. Collins, Mat. Res. Soc. Proc., Vol. 258, (1992), p. 1031.
"Experimental Determination of the Dark Fermi Level in Hydrogenated Amorphous Silicon", R.M. Dawson, S. Nag, M.Gunes, C.R. Wronski, M. Bennett and Y.M.Li, Mat. Res. Soc. Proc., Vol. 258, (1992), p. 747.
"Optical Properties of Hydrogenated Amorphous Silicon, Silicon Germanium, and Silicon Carbide Thin Films", R.M.Dawson, Y.M.Li, M.Gunes, S.Nag, R.W. Collins, C.R. Wronski, M. Bennett, Mat. Res. Soc. Proc., Vol. 258, (1992), p. 595.
"Optoelectronic Properties of Plasma CVD a-Si:H Modified by Filament-Generated Atomic H", Y.M.Li, I. An, M. Gunes, R.M. Dawson, R.W. Collins and C.R. Wronski, Mat. Res. Soc. Proc., Vol. 258, (1992), p. 57.
"Optical Properties of the Component Materials in Multijunction Hydrogenated Amorphous Silicon Based Solar Cells", R.M. Dawson, Y. Li, M.Gunes, S. Nag, R.W. Collins, M. Bennett and C.R. Wronski, The 11th European PV Solar Energy Conference and Exhibition, Montreux, Switzerland, October, 1992, p680.
"Findings and Plans of the Stable Materials Advisory Research Team", C.R. Wronski, N. Maley et al. Ibid, p.72.
"Photocarrier Transport and Recombination in Amorphous Silicon", C.R. Wronski, R.M.Dawson, M. Gunes, Y.M. Li and R.W. Collins, Mat. Res. Soc. Proc., 297, (1993).
"Effects of Gas Phase Hydrogen Dilution on the Nucleation, Growth and Interfaces of a-Si1-xCx:H Alloys", Y.Lu, I. An, M.Gunes, M.Wagaki, C.R. Wronski and R.W. Collins, Mat. Res. Soc. Proc., 297, (1993) p.1.
"Transport Considerations in Hydrogenated Amorphous Silicon Materials with Widely Varying Mobilities and the Consequences on Device Performance", R.M.Dawson, C.M.Fortmann, M. Gunes, Y.M.Li, S.S.Nag and C.R. Wronski, Conf. Record of 23rd IEEE PVSC, Louesville, KY, (IEEE, N.Y.) 1993, p.1005.
"Investigation of Intrinsic and Light Induced Defect States in Hydrogenated Amorphous Silicon Films Using Steady-State Photoconductivity and Sub-Bandgap Absorption", M. Gunes, Y.M.Li, R.M. Dawson, S.Nag, C.M. Fortmann and C.R. Wronski, Conf. Record of 23rd IEEE PVSC, Louesville, KY, (IEEE, N.Y.) 1993, p.885.
"The Effect of p-layers Deposited Under Varying Conditions on Hydrogenated Amorphous Silicon Homojunctions Solar Cell Performance", R.M.Dawson, S.S.Nag, C.R. Wronski and N.Maley, Conf. Record of 23rd IEEE PVSC, Louesville, KY, (IEEE, N.Y.) 1993, p.960.
"The Staebler-Wronski Effect and Thermal Equilibrium of Defect and Carrier Concentrations", R.M.Dawson, C.M. Fortmann, M.Gunes, Y.M. Li, S. Nag and C.R.Wronski, MRS Symposium Proceedings, 1994, 336, p251.
"Charged Defect State Distributions Obtained from the Analysis of Photoconductivity in Intrinsic a-Si:H Films", M. Gunes, R.W.Collins and C.R.Wronski, MRS Symposium Proceedings, 1994, 336, p413.
"Process-Property Relationships in a-SiC:H Deposition Excursions in Parameter Space Guided by Real Time Spectroscopic Ellipsometry", Y.Lu, I. An, C.R.Wronski and R.W. Collins, MRS Symposium Proceedings, 1994, 336, p595.
"Real Time Spectroellipsometry Characterization of the Fabrication of Amorphous Silicon Solar Cells", R.W. Collins, Y.Lu, S. Kim and C.R. Wronski, Semiconductor Characterization: Present Status and Future Needs, edited by W.M.Bullis, D.G. Seiler and A.C.Diebold (AIP, N.Y., 1995), p.517.
"Amorphous Silicon Technology Coming of Age", C.R.Wronski, IEEE First World Conference on Photovltaic Energy Conversion: Conference Record of the 24th IEEE Photovoltaics Specialists Conference-1994, Vol. I, (IEEE, New York, 1995) PP 373.
"Mobility and Optical Gaps in Different a-Si:H Based Materials and their Impact on Cell Performance", Ing Shin Chen, T. Jamali-beh, Y.Lee, C.Y.Li and C.R.Wronski, IEEE First World Conference on Photovltaic Energy Conversion: Conference Record of the 24th IEEE Photovoltaics Specialists Conference-1994, Vol. I, (IEEE, New York, 1995) PP 468-492.
"Direct Correlations of Bulk Charged and Neutral Defect Densities of States in a-Si:H Films with Characteristics of Schottky Barrier Solar Cell Structures", M.Gunes, H.Liu, C.M.Fortmann, S.J.Fonash and C.R.Wronski, IEEE First World Conference on Photovltaic Energy Conversion: Conference Record of the 24th IEEE Photovoltaics Specialists Conference-1994, Vol. I, (IEEE, New York, 1995) PP 512-516.
"Real Time Characterization of the Preparation of Amorphous Silicon-Based Solar Cells", Y.Lu, S.Kim, I.S.Chen, Y.Lee, C.M. Fortmann, C.R.Wronski, and R.W.Collins, IEEE First World Conference on Photovltaic Energy Conversion: Conference Record of the 24th IEEE Photovoltaics Specialists Conference-1994, Vol. I, (IEEE, New York, 1995) PP 421-424.
"Analysis of Non-Uniform Creation of Light Induced Defects in Schottky Barrier Solar Cell Structures", H.Liu, C.T.Malone, C.M.Fortmann and C.R.Wronski, MRS Pittsburgh,1995 Vol.377, p.687.
"Effect of White and Red Light Illumination on the Degradation of a-Si:H Solar Cells", T.Jamali-Beh, I.S.Chen, H.Liu, Y.Lee and C.R.Wronski, MRS Pittsburgh,1995 Vol.377 p.627.
"Real Time Monitoring of Amorphous Silicon Solar Cell Fabrication", Y.Lu, S.Kim, J.S.Burnham, I.S.Chen, Y.Lee, Y.E. Strausser, C.R.Wronski and R.Collins, MRS Pittsburgh, 1995 Vol.377, p.603.
"Characterization of Amorphous Silicon Solar Cell Preparation Processes by Real Time Spectroscopic Ellipsometry", R.W.Collins, J.Koh, Y.Lu, S.Kim, J.S. Burnham and C.R.Wronski, 25th IEEE Photovoltaic Specialists Conference, May, 1996, (IEEE, N.Y.) 1996, p.1035.
"Importance of Charge Defects in a-Si:H Materials and Solar Cell Structures", L.Jiao, H.Liu, S.Semoushikina, Y.Lee and C.R.Wronski, 25th IEEE Photovoltaic Specialists Conference, May, 1996, (IEEE, N.Y.) 1996, p.1073.
"Light-Induced Degradation In Different p-i-n and n-i Shottky Barrier Solar Cell Structures", H.Liu, Y.Lee, T.Jamali-beh, Z.Lu, R.Collins and C.R.Wronski, 25th IEEE Photovoltaic Specialists Conference, May, 1996, (IEEE, N.Y.) 1996, p.1125.
"Stability of a-Si:H Solar Cells and Corresponding Intrinsic Materials Fabricated Using Hydrogen Diluted Silane", Y.Lee, L.Jiao, H.Liu, Z.Lu, R.Collins and C.R.Wronski, 25th IEEE Photovoltaic Specialists Conference, May, 1996, (IEEE, N.Y.) 1996, p.1165.
"Advances in the Characterization of Compositionally-Graded Layers in Amorphous Semiconductor Solar Cells by Real Time Spectroellipsometry", R.W. Collins, S. Kim, J. Koh, J.S. Burnham, I.-S. Chen and C.R. Wronski, Mat. Recs. Soc. Symp. Proc (in press, 1996).
"Structural Evolution of Top-Junction a-SiC:H:B and Mixed-Phase (Microcrystalline Si)-(a-Si1-xCx:H)p-layers in a-Si:H n-i-p Solar Cells", J.Koh, J.S. Burnham, Y.Lee, H.Liu, I. Chen, C.R. Wronski, and R.W. Collins, Mat. Recs. Soc. Symp. Proc (in press, 1996).