Electrical Characterization of Doped Silicon Nanowires Grown in Anodized Aluminum Membranes

Richard Bemben

Mentor: Professor Joan Redwing

 

            The purpose of this research project is to characterize the electrical properties of arrays of intentionally doped silicon nanowires grown in a porous alumina template.  This project requires electrodeposition of Silver (Ag), Cobalt (Co), and Gold (Au), in that respective order, into nanoporous anodic alumina membranes.  After all three elements are deposited; Si nanowires will be synthesized using the vapor-liquid-solid (VLS) growth method at 500°C using SiH₄ gas to supply the Si for the nanowires.  These nanowires will be doped with Boron (B), making them p-type. 

            After the Si nanowires have grown out of the top of the membranes, an electrical contact will be placed on the top surface of the membrane.  The addition of this electrical contact will enable measurement of the electrical resistance of the nanowire array.  Current-voltage measurements will be carried out to study how varying the doping level of the nanowires affects the electrical resistance of the p-type Si nanowire array.