Project description

The transistor is indisputably the most prevalent device in electronics today. Processors and other integrated circuits contain millions of metal-oxide-semiconductor field-effect transistors (MOSFETs). As these devices become smaller and smaller, they can operate faster with less power consumption, resulting in more powerful computers. However, as the feature size of these devices approaches a limit on the nanoscale, it is necessary to develop a new device technology so that processor performance can continue to improve.

Silicon nanowires can be prepared with a controlled diameter, length, and doping. Through the electrical characterization of these nanowires, we will determine which characteristics are most suitable for next-generation FETs and determine how these devices will behave. Both n-type and p-type wires will be considered. Many of the known characteristics of silicon nanowires make it likely that these new field-effect transistors will outperform their traditional counterparts.